Invention Grant
- Patent Title: Semiconductor integrated circuit
- Patent Title (中): 半导体集成电路
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Application No.: US13674766Application Date: 2012-11-12
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Publication No.: US09030176B2Publication Date: 2015-05-12
- Inventor: Masafumi Onouchi , Kazuo Otsuga , Yasuto Igarashi , Sadayuki Morita , Koichiro Ishibashi , Kazumasa Yanagisawa
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2011-247215 20111111
- Main IPC: G05F1/00
- IPC: G05F1/00 ; G05F1/59

Abstract:
A semiconductor integrated circuit includes a plurality of output transistors each controlling the magnitude of an output voltage relative to the magnitude of a load current according to a control value indicated by an impedance control signal applied to a control terminal, a voltage monitor circuit outputting an output voltage monitor value indicating a voltage value of the output voltage, and a control circuit controlling the magnitude of the control value according to the magnitude of an error value between a reference voltage indicating a target value of the output voltage and the output voltage monitor value, and controls based on the control value whether any of such transistors be brought to a conducting state. The control circuit increases a change step of the control value relative to the error value during a predetermined period according to prenotification signals for notifying a change of the load current in advance.
Public/Granted literature
- US20130169247A1 SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2013-07-04
Information query
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