Invention Grant
- Patent Title: Quantum dot photo-field-effect transistor
- Patent Title (中): 量子点光场效应晶体管
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Application No.: US13596968Application Date: 2012-08-28
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Publication No.: US09030189B2Publication Date: 2015-05-12
- Inventor: Edward Hartley Sargent
- Applicant: Edward Hartley Sargent
- Agency: Hill & Schumacher
- Agent Lynn C. Schumacher; Stephen W. Leonard
- Main IPC: G01R31/00
- IPC: G01R31/00 ; H01L31/0352 ; H01L31/112

Abstract:
Photo-field-effect transistor devices and associated methods are disclosed in which a photogate, consisting of a quantum dot sensitizing layer, transfers photoelectrons to a semiconductor channel across a charge-separating (type-II) heterointerface, producing a sustained primary and secondary flow of carriers between source and drain electrodes. The light-absorbing photogate thus modulates the flow of current along the channel, forming a photo-field effect transistor.
Public/Granted literature
- US20130049738A1 QUANTUM DOT PHOTO-FIELD-EFFECT TRANSISTOR Public/Granted day:2013-02-28
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