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US09030189B2 Quantum dot photo-field-effect transistor 有权
量子点光场效应晶体管

Quantum dot photo-field-effect transistor
Abstract:
Photo-field-effect transistor devices and associated methods are disclosed in which a photogate, consisting of a quantum dot sensitizing layer, transfers photoelectrons to a semiconductor channel across a charge-separating (type-II) heterointerface, producing a sustained primary and secondary flow of carriers between source and drain electrodes. The light-absorbing photogate thus modulates the flow of current along the channel, forming a photo-field effect transistor.
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