Invention Grant
- Patent Title: High voltage tolerant input/output circuit
- Patent Title (中): 高耐压输入/输出电路
-
Application No.: US13846235Application Date: 2013-03-18
-
Publication No.: US09030247B2Publication Date: 2015-05-12
- Inventor: Wen-Hong Su
- Applicant: Alchip Technologies, Ltd.
- Applicant Address: TW Taipei
- Assignee: Alchip Technologies, Ltd.
- Current Assignee: Alchip Technologies, Ltd.
- Current Assignee Address: TW Taipei
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: TW101141715A 20121109
- Main IPC: H03K5/08
- IPC: H03K5/08 ; H03K19/003 ; H03K19/0185

Abstract:
A high voltage tolerant I/O circuit of an electronic device is disclosed, including a voltage reducing circuit, a first node, a first transistor, a second transistor, and a control logic. The voltage reducing circuit is coupled with a signal pad and utilized for generating a reduced voltage according to an external voltage. When an internal voltage generated by an internal circuit of the electronic device is greater than the reduced voltage, the first node outputs the internal voltage as a first voltage. When the internal voltage is less than the reduced voltage, the first node outputs the reduced voltage as the first voltage. The first transistor is coupled with the signal pad and the first node. The second transistor is coupled with a second terminal of the first transistor and a fixed-voltage terminal. The control logic operates according to the first voltage to control switching operations of the second transistor.
Public/Granted literature
- US20140132328A1 HIGH VOLTAGE TOLERANT INPUT/OUTPUT CIRCUIT Public/Granted day:2014-05-15
Information query
IPC分类: