A semiconductor device (100A) according to the present invention includes: a thin-film transistor (10); a first insulating layer (9) which has been formed over the thin-film transistor (10); a second insulating layer (11) which has been formed on the first insulating layer (9) and which has a hole (21a); and an opaque layer (12a) which is arranged so as to overlap an oxide semiconductor layer (5) when viewed along a normal to the substrate (1). The opaque layer (12a) has been formed in the hole (21a). The opaque layer (12a) has a raised and curved upper surface and the upper surface of the second insulating layer (11) is located closer to the substrate (1) than the upper surface of the opaque layer (12a) is.