A non-volatile memory device includes a memory cell array in which a plurality of bit lines intersect a plurality of word lines and a non-volatile memory cell is disposed at each intersection, a page buffer which is provided for each bit line and which includes a latch configured to store data to be written to a memory cell connected to a word line selected from among the plurality of word lines or data read from the memory cell, and a control circuit configured to control a data input time from the bit line to the page buffer and a data detection time of the latch according to a voltage level of a common source line connected to sources of the respective bit lines during an operation of reading data from the memory cell.