Invention Grant
US09030899B2 Memory device with post package repair, operation method of the same and memory system including the same
有权
内存装置具有后包修复，操作方法相同，内存系统包括相同
- Patent Title: Memory device with post package repair, operation method of the same and memory system including the same
- Patent Title (中): 内存装置具有后包修复，操作方法相同，内存系统包括相同
-
Application No.: US14106832Application Date: 2013-12-15
-
Publication No.: US09030899B2Publication Date: 2015-05-12
- Inventor: Joo-Hyeon Lee
- Applicant: SK Hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2013-0119045 20131007
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C29/00 ; G11C29/04
Abstract:
An operation method of a memory device includes entering a repair mode, changing an input path of setting data from a set path to a repair path in response to the entering of the repair mode, receiving the setting data together with a setting command, ending the repair mode after the receiving is repeated a set number of times, changing the input path of the setting data from the repair path to the set path in response to the ending of the repair mode, and programming a repair address for a defective memory cell of the memory device to a nonvolatile memory using the setting data.
Public/Granted literature
- US20150098287A1 MEMORY DEVICE AND OPERATION METHOD OF MEMORY DEVICE AND MEMORY SYSTEM Public/Granted day:2015-04-09
Information query
