Invention Grant
- Patent Title: Conduction cooled high power semiconductor laser and method for fabricating the same
- Patent Title (中): 导通冷却大功率半导体激光器及其制造方法
-
Application No.: US14367372Application Date: 2012-11-22
-
Publication No.: US09031105B2Publication Date: 2015-05-12
- Inventor: Jingwei Wang , Xingsheng Liu
- Applicant: Xi'an Focuslight Technologies Co., Ltd.
- Applicant Address: CN Xi'an
- Assignee: Xi'an Focuslight Technologies, Co., Ltd.
- Current Assignee: Xi'an Focuslight Technologies, Co., Ltd.
- Current Assignee Address: CN Xi'an
- Agency: Fish & Tsang, LLP
- Priority: CN201110453400 20111220
- International Application: PCT/CN2012/085031 WO 20121122
- International Announcement: WO2013/091459 WO 20130627
- Main IPC: H01S3/04
- IPC: H01S3/04 ; H01S5/024 ; H01S5/022 ; H01S5/42 ; H01S5/40

Abstract:
A conduction cooled high power semiconductor laser and a method for fabricating the same are provided. The conduction cooled high power semiconductor laser comprises a heat sink (2) and one or more semiconductor laser units (1). The semiconductor laser unit consists of a laser chip (3), a substrate (4) bonded to the laser chip for heat dissipation and electrical connection, and an insulation plate (5) soldered to the substrate for insulation and heat dissipation. The semiconductor laser unit is soldered on the heat sink with the insulation plate therebetween. The semiconductor laser unit may be tested, aged, and screened in advance, and thereby the yield of the lasers can be improved and the manufacturing costs can be reduced. The laser has desirable heat dissipation performance, high reliability, and is applicable to high temperature and other complex and volatile environments.
Public/Granted literature
- US20150030044A1 Conduction Cooled High Power Semiconductor Laser And Method For Fabricating The Same Public/Granted day:2015-01-29
Information query