Invention Grant
- Patent Title: Data recovery in solid state memory devices
- Patent Title (中): 固态存储器件中的数据恢复
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Application No.: US13908291Application Date: 2013-06-03
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Publication No.: US09032263B2Publication Date: 2015-05-12
- Inventor: Xueshi Yang
- Applicant: Marvell World Trade Ltd.
- Applicant Address: BB St. Michael
- Assignee: Marvell World Trade Ltd.
- Current Assignee: Marvell World Trade Ltd.
- Current Assignee Address: BB St. Michael
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/08 ; G11C11/56 ; H03M13/15 ; H03M13/19 ; H03M13/37 ; H03M13/45 ; H03M13/11

Abstract:
Embodiments herein provide data recovery techniques and configurations for solid state memory devices. For example, a method includes identifying a hard error associated with a cell of a solid state memory device, providing a location of the cell having the identified hard error to a decoder to recover data originally programmed to the cell, and recovering the data originally programmed to the cell using the decoder. Other embodiments may be described and/or claimed.
Public/Granted literature
- US20130297985A1 DATA RECOVERY IN SOLID STATE MEMORY DEVICES Public/Granted day:2013-11-07
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