Invention Grant
US09032264B2 Test method for nonvolatile memory 有权
非易失性存储器的测试方法

Test method for nonvolatile memory
Abstract:
According to one embodiment, a test method for testing a nonvolatile semiconductor memory including first and second areas includes performing first to sixth processes every block included in the first area. The first process performs block erase. The second process writes data to a first block. The third process reads data from first pages except a second page in the first block. The fourth process reads data from the second page. The fifth process records an event of a first read error in the second area when a read error happens in the third process. The sixth process records an event of a second read error in the second area when a read error happens in the fourth process.
Public/Granted literature
Information query
Patent Agency Ranking
0/0