Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14325436Application Date: 2014-07-08
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Publication No.: US09032350B2Publication Date: 2015-05-12
- Inventor: Kayoko Shibata , Hitoshi Miwa , Yoshihiko Inoue
- Applicant: PS4 Luxco S.A.R.L.
- Applicant Address: LU Luxembourg
- Assignee: PS4 Luxco S.A.R.L.
- Current Assignee: PS4 Luxco S.A.R.L.
- Current Assignee Address: LU Luxembourg
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2009-235488 20091009
- Main IPC: G06F9/455
- IPC: G06F9/455 ; G06F17/50 ; H01L27/105 ; G11C5/06 ; G11C29/02 ; G11C29/12 ; H01L25/065 ; H01L27/108 ; H01L23/538 ; H01L21/66 ; H01L23/48

Abstract:
A method for bypassing a defective through silicon via x in a group of n adjacent through silicon vias, includes receiving a plurality of relief signals to identify the defective through silicon via x, activating x−1 switch circuits to connect x−1 data circuits to through silicon vias 1 to x−1 in the group of n adjacent through silicon vias, activating n-x switch circuits to connect n-x data circuits to through silicon vias x+1 to n in the group of n adjacent through silicon vias, and activating a switch circuit to connect a data circuit to an auxiliary through silicon via which is adjacent through silicon via n in the group of n adjacent through silicon vias.
Public/Granted literature
- US20140320203A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-10-30
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