Invention Grant
- Patent Title: Reactive sputtering apparatus
- Patent Title (中): 反应溅射装置
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Application No.: US13310230Application Date: 2011-12-02
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Publication No.: US09034152B2Publication Date: 2015-05-19
- Inventor: Nobuo Yamaguchi , Kazuaki Matsuo , Susumu Akiyama , Satoshi Uchino , Yoshimitsu Shimane
- Applicant: Nobuo Yamaguchi , Kazuaki Matsuo , Susumu Akiyama , Satoshi Uchino , Yoshimitsu Shimane
- Applicant Address: JP Kawasaki-Shi
- Assignee: CANON ANELVA CORPORATION
- Current Assignee: CANON ANELVA CORPORATION
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2010-284944 20101221
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/00

Abstract:
A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.
Public/Granted literature
- US20120152736A1 REACTIVE SPUTTERING APPARATUS Public/Granted day:2012-06-21
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