Invention Grant
- Patent Title: Sputtering target and process for producing same
- Patent Title (中): 溅射目标和生产方法
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Application No.: US13119867Application Date: 2010-02-24
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Publication No.: US09034154B2Publication Date: 2015-05-19
- Inventor: Yuichiro Nakamura , Akira Hisano , Junnosuke Sekiguchi
- Applicant: Yuichiro Nakamura , Akira Hisano , Junnosuke Sekiguchi
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Howson & Howson LLP
- Priority: JP2009-049188 20090303
- International Application: PCT/JP2010/052837 WO 20100224
- International Announcement: WO2010/101051 WO 20100910
- Main IPC: C23C14/34
- IPC: C23C14/34

Abstract:
A sputtering target with low generation of particles in which oxides, carbides, nitrides, borides, intermetallic compounds, carbonitrides, and other substances without ductility exist in a matrix phase made of a highly ductile substance at a volume ratio of 1 to 50%, wherein a highly ductile and conductive metal coating layer is formed on an outermost surface of the target. Provided are a sputtering target capable of improving the target surface in which numerous substances without ductility exist and preventing or inhibiting the generation of nodules and particles during sputtering, and a method of producing such a sputtering target.
Public/Granted literature
- US20110162971A1 Sputtering Target and Process for Producing Same Public/Granted day:2011-07-07
Information query
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