Invention Grant
- Patent Title: MEMS device and method of formation thereof
- Patent Title (中): MEMS器件及其形成方法
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Application No.: US14057909Application Date: 2013-10-18
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Publication No.: US09034677B2Publication Date: 2015-05-19
- Inventor: Hsin-Ting Huang , Jung-Huei Peng , Shang-Ying Tsai , Yao-Te Huang , Ming-Tung Wu , Ping-Yin Liu , Xin-Hua Huang , Yuan-Chih Hsieh
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; B81C1/00 ; H01L23/00

Abstract:
The present disclosure provides a method including providing a first substrate; and forming a microelectromechanical system (MEMS) device on a first surface of the first substrate. A bond pad is formed on at least one bonding site on the first surface of the first substrate. The bonding site is recessed from the first surface. Thus, a top surface of the bond pad may lie below the plane of the top surface of the substrate. A device with recessed connective element(s) (e.g., bond pad) is also described. In further embodiments, a protective layer is formed on the recessed connective element during dicing of a substrate.
Public/Granted literature
- US20140248730A1 MEMS Device and Method of Formation Thereof Public/Granted day:2014-09-04
Information query
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