Invention Grant
- Patent Title: Manufacturing methods for semiconductor devices
- Patent Title (中): 半导体器件的制造方法
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Application No.: US13538352Application Date: 2012-06-29
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Publication No.: US09034686B2Publication Date: 2015-05-19
- Inventor: Hongying Peng , Bastiaan Arie Korevaar , Jinbo Cao , Stephen Lorenco Araujo , Scott Daniel Feldman-Peabody , Robert Dwayne Gossman
- Applicant: Hongying Peng , Bastiaan Arie Korevaar , Jinbo Cao , Stephen Lorenco Araujo , Scott Daniel Feldman-Peabody , Robert Dwayne Gossman
- Applicant Address: US AZ Tempe
- Assignee: First Solar, Inc.
- Current Assignee: First Solar, Inc.
- Current Assignee Address: US AZ Tempe
- Agency: MacMillan, Sobanski & Todd, LLC
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/073

Abstract:
Embodiments of the present invention include a method. The method includes heating a layer stack. The layer stack includes a first layer comprising cadmium and tin, a metal layer disposed over the first layer, and a window layer disposed over the metal layer. Heating the stack includes transforming at least a portion of the first layer from an amorphous phase to a crystalline phase. Heating may be performed using any of various configurations, such as, for example, heating an individual stack, or using a face-to-face configuration of multiple stacks. The stack may be used for fabricating a photovoltaic device.
Public/Granted literature
- US20140004655A1 MANUFACTURING METHODS FOR SEMICONDUCTOR DEVICES Public/Granted day:2014-01-02
Information query
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