Invention Grant
- Patent Title: Thin film transistor, thin film transistor array panel including the same, and method of manufacturing the same
- Patent Title (中): 薄膜晶体管，包括其的薄膜晶体管阵列面板及其制造方法
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Application No.: US14468472Application Date: 2014-08-26
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Publication No.: US09034691B2Publication Date: 2015-05-19
- Inventor: Yong Su Lee , Yoon Ho Khang , Dong Jo Kim , Hyun Jae Na , Sang Ho Park , Se Hwan Yu , Chong Sup Chang
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin, Gyeonggi-do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin, Gyeonggi-do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2012-0034099 20120402
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/66 ; H01L27/12 ; H01L29/786 ; H01L21/385 ; H01L21/441
Abstract:
A thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same are provided, wherein the thin film transistor includes a channel region including an oxide semiconductor, a source region and a drain region connected to the channel region and facing each other at both sides with respect to the channel region, an insulating layer positioned on the channel region, and a gate electrode positioned on the insulating layer, wherein an edge boundary of the gate electrode and an edge boundary of the channel region are substantially aligned.
Public/Granted literature
Information query
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