Invention Grant
- Patent Title: Method of forming a micro device transfer head with silicon electrode
- Patent Title (中): 用硅电极形成微器件转印头的方法
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Application No.: US13481615Application Date: 2012-05-25
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Publication No.: US09034754B2Publication Date: 2015-05-19
- Inventor: Dariusz Golda , Andreas Bibl
- Applicant: Dariusz Golda , Andreas Bibl
- Applicant Address: US CA Santa Clara
- Assignee: LuxVue Technology Corporation
- Current Assignee: LuxVue Technology Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/768 ; H01L23/48

Abstract:
A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect. A dielectric layer covers a top surface of each mesa structure.
Public/Granted literature
- US20130316529A1 METHOD OF FORMING A MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODE Public/Granted day:2013-11-28
Information query
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