Invention Grant
US09034763B2 Sloped structure, method for manufacturing sloped structure, and spectrum sensor
有权
斜坡结构，倾斜结构的制造方法和光谱传感器
- Patent Title: Sloped structure, method for manufacturing sloped structure, and spectrum sensor
- Patent Title (中): 斜坡结构，倾斜结构的制造方法和光谱传感器
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Application No.: US13541311Application Date: 2012-07-03
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Publication No.: US09034763B2Publication Date: 2015-05-19
- Inventor: Takahiko Yoshizawa
- Applicant: Takahiko Yoshizawa
- Applicant Address: JP Tokyo
- Assignee: SEIKO EPSON CORPORATION
- Current Assignee: SEIKO EPSON CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2011-164537 20110727
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/0232 ; H01L21/306 ; G01J3/427 ; B81C1/00 ; G01J3/51 ; G01J3/02
Abstract:
A method for manufacturing a sloped structure is disclosed. The method includes the steps of: (a) forming a sacrificial film above a substrate; (b) forming a first film above the sacrificial film; (c) forming a second film having a first portion connected to the substrate, a second portion connected to the first film, and a third portion positioned between the first portion and the second portion; (d) removing the sacrificial film; and (e) bending the third portion of the second film after the step (d), thereby sloping the first film with respect to the substrate.
Public/Granted literature
- US20130026590A1 SLOPED STRUCTURE, METHOD FOR MANUFACTURING SLOPED STRUCTURE, AND SPECTRUM SENSOR Public/Granted day:2013-01-31
Information query
IPC分类:
