Invention Grant
- Patent Title: Light sensor and driving method of photo transistor thereof
- Patent Title (中): 光传感器及其光电晶体管的驱动方法
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Application No.: US13659929Application Date: 2012-10-25
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Publication No.: US09035228B2Publication Date: 2015-05-19
- Inventor: Wei-Tsung Chen , Ted-Hong Shinn , Chuang-Chuang Tsai , Wen-Chung Tang , Chih-Hsiang Yang
- Applicant: E Ink Holdings Inc.
- Applicant Address: TW Hsinchu
- Assignee: E Ink Holdings Inc.
- Current Assignee: E Ink Holdings Inc.
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW101129792A 20120816
- Main IPC: H01J40/14
- IPC: H01J40/14 ; H04N5/335 ; H04N5/361 ; H04N5/376 ; H01L27/144

Abstract:
A light sensor including a photo transistor is provided. A gate of the photo transistor receives a gate driving signal. The photo transistor senses a light source based on the gate driving signal to generate a light current signal. The photo transistor includes a metal-oxide active layer. The gate driving signal has a first voltage level during a trap period and has a second voltage level during a read period. The first voltage level is higher than the second voltage level. The gate driving signal of the photo transistor introduces a mechanism to rapidly eliminate excess carriers. Accordingly, the photo transistor has a rapid response while maintaining good light responsibility. Furthermore, a method for driving the foregoing photo transistor is also provided.
Public/Granted literature
- US20140048679A1 LIGHT SENSOR AND DRIVING METHOD OF PHOTO TRANSISTOR THEREOF Public/Granted day:2014-02-20
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