Invention Grant
- Patent Title: Infrared sensor element
- Patent Title (中): 红外传感元件
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Application No.: US14165744Application Date: 2014-01-28
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Publication No.: US09035253B2Publication Date: 2015-05-19
- Inventor: Toshinari Noda , Kazuki Komaki
- Applicant: Panasonic Corporation
- Applicant Address: JP Osaka
- Assignee: Panasonic Intellectual Property Managment Co., Ltd.
- Current Assignee: Panasonic Intellectual Property Managment Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: RatnerPrestia
- Priority: JP2008-168352 20080627; JP2008-295217 20081119
- Main IPC: G01J5/00
- IPC: G01J5/00 ; G01J5/34 ; H01L37/02

Abstract:
An infrared sensor element according to the present invention includes a substrate, and a lower electrode layer, a pyroelectric layer, and an upper electrode layer sequentially formed on the substrate. The substrate has a linear thermal expansion coefficient higher than that of the pyroelectric layer, and the pyroelectric layer includes a polycrystalline body having an in-plane stress in a compressive direction. Thus, the infrared sensor element realizes the pyroelectric layer having a high orientation in a polarization axis direction, an excellent pyroelectric property.
Public/Granted literature
- US20140339427A1 INFRARED SENSOR ELEMENT Public/Granted day:2014-11-20
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