Invention Grant
- Patent Title: Thin film transistor having an oxide semiconductor thin film formed on a multi-source drain electrode
- Patent Title (中): 在多源极电极上形成氧化物半导体薄膜的薄膜晶体管
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Application No.: US13640868Application Date: 2011-04-05
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Publication No.: US09035295B2Publication Date: 2015-05-19
- Inventor: Okifumi Nakagawa , Yoshifumi Ohta , Yuuji Mizuno , Yoshimasa Chikama , Tsuyoshi Inoue , Masahiko Suzuki , Michiko Takei , Yoshiyuki Harumoto , Yoshinobu Miyamoto
- Applicant: Okifumi Nakagawa , Yoshifumi Ohta , Yoshimasa Chikama , Tsuyoshi Inoue , Masahiko Suzuki , Michiko Takei , Yoshiyuki Harumoto , Yoshinobu Miyamoto , Hinae Mizuno
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Keating & Bennett, LLP
- Priority: JP2010-093436 20100414
- International Application: PCT/JP2011/058589 WO 20110405
- International Announcement: WO2011/129227 WO 20111020
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H01L29/10 ; H01L29/76 ; H01L21/00 ; H01L29/786 ; H01L27/12 ; H01L29/66
Abstract:
A semiconductor device (100A) according to the present invention includes an oxide semiconductor layer (31a), first and second source electrodes (52a1 and 52a2), and first and second drain electrodes (53a1 and 53a2). The second source electrode (52a2) is formed to be in contact with a top surface of the first source electrode and inner to the first source electrode (52a1). The second drain electrode (53a2) is formed to be in contact with a top surface of the first drain electrode (53a1) and inner to the first drain electrode (53a1). The oxide semiconductor layer (31a) is formed to be in contact with the top surface of the first source electrode (52a1) and the top surface of the first drain electrode (53a1).
Public/Granted literature
- US20130134411A1 SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCTION OF SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE Public/Granted day:2013-05-30
Information query
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