Invention Grant
- Patent Title: Imaging device
- Patent Title (中): 成像设备
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Application No.: US14303629Application Date: 2014-06-13
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Publication No.: US09035301B2Publication Date: 2015-05-19
- Inventor: Hironobu Takahashi , Yukinori Shima , Yasuharu Hosaka , Toshimitsu Obonai , Masashi Tsubuku
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2013-128794 20130619
- Main IPC: H01L29/22
- IPC: H01L29/22 ; H01L27/146 ; H01L29/786

Abstract:
An imaging device that is highly stable to irradiation with radial rays such as X-rays and can inhibit a decrease in electrical characteristics is provided. The imaging device takes an image with radial rays such as X-rays and includes pixel circuits arranged in a matrix and a scintillator overlapping the pixel circuits. The pixel circuits each includes a switching transistor with an extremely small off-state current and a light-receiving element which is configured to convert the radial rays to electrical charges. A gate insulating film of the switching transistor has a stacked structure including a silicon nitride film with a thickness of 100 nm to 400 nm and a silicon oxide film or a silicon oxynitride film with a thickness of 5 nm to 20 nm.
Public/Granted literature
- US20140374745A1 IMAGING DEVICE Public/Granted day:2014-12-25
Information query
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