Invention Grant
- Patent Title: Silicon carbide device and a method for manufacturing a silicon carbide device
- Patent Title (中): 碳化硅器件及其制造方法
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Application No.: US13850374Application Date: 2013-03-26
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Publication No.: US09035322B2Publication Date: 2015-05-19
- Inventor: Hans-Joachim Schulze , Christian Hecht , Roland Rupp , Rudolf Elpelt
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/16 ; H01L21/04 ; H01L29/872 ; H01L29/66 ; H01L29/06
Abstract:
A silicon carbide device includes an epitaxial silicon carbide layer including a first conductivity type and a buried lateral silicon carbide edge termination region located within the epitaxial silicon carbide layer including a second conductivity type. The buried lateral silicon carbide edge termination region is covered by a silicon carbide surface layer including the first conductivity type.
Public/Granted literature
- US20140291695A1 Silicon Carbide Device and a Method for Manufacturing a Silicon Carbide Device Public/Granted day:2014-10-02
Information query
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