Invention Grant
- Patent Title: Bidirectional semiconductor device for protection against electrostatic discharges, usable on silicon on insulator
- Patent Title (中): 用于防止静电放电的双向半导体器件，可用于绝缘体上硅
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Application No.: US13768730Application Date: 2013-02-15
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Publication No.: US09035349B2Publication Date: 2015-05-19
- Inventor: Philippe Galy , Nicolas Guitard , Thomas Benoist
- Applicant: STMicroelectronics SA
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics, S.A.
- Current Assignee: STMicroelectronics, S.A.
- Current Assignee Address: FR Montrouge
- Agency: Slater & Matsil, L.L.P.
- Priority: FR1251473 20120217
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L27/02 ; H01L29/87
Abstract:
A device includes, within a layer of silicon on insulator, a central semiconductor zone including a central region having a first type of conductivity, two intermediate regions having a second type of conductivity opposite to that of the first one, respectively disposed on either side of and in contact with the central region in order to form two PN junctions, two semiconductor end zones respectively disposed on either side of the central zone, each end zone comprising two end regions of opposite types of conductivity, in contact with the adjacent intermediate region, the two end regions of each end zone being mutually connected electrically in order to form the two terminals of the device.
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Information query
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