Invention Grant
US09035354B2 Heterojunction transistors having barrier layer bandgaps greater than channel layer bandgaps and related methods
有权
具有比沟道层带隙更大的阻挡层带隙的异质结晶体管和相关方法
- Patent Title: Heterojunction transistors having barrier layer bandgaps greater than channel layer bandgaps and related methods
- Patent Title (中): 具有比沟道层带隙更大的阻挡层带隙的异质结晶体管和相关方法
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Application No.: US12566973Application Date: 2009-09-25
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Publication No.: US09035354B2Publication Date: 2015-05-19
- Inventor: Adam William Saxler , Yifeng Wu , Primit Parikh
- Applicant: Adam William Saxler , Yifeng Wu , Primit Parikh
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/20 ; H01L29/66 ; H01L29/207 ; H01L29/80
Abstract:
A heterojunction transistor may include a channel layer comprising a Group III nitride, a barrier layer comprising a Group III nitride on the channel layer, and an energy barrier comprising a layer of a Group III nitride including indium on the channel layer such that the channel layer is between the barrier layer and the energy barrier. The barrier layer may have a bandgap greater than a bandgap of the channel layer, and a concentration of indium (In) in the energy barrier may be greater than a concentration of indium (In) in the channel layer. Related methods are also discussed.
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