Invention Grant
- Patent Title: Semiconductor device and SiP device using the same
- Patent Title (中): 半导体器件和使用SiP器件的SiP器件
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Application No.: US13610241Application Date: 2012-09-11
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Publication No.: US09035360B2Publication Date: 2015-05-19
- Inventor: Kishou Kaneko , Naoya Inoue , Yoshihiro Hayashi
- Applicant: Kishou Kaneko , Naoya Inoue , Yoshihiro Hayashi
- Applicant Address: JP Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2011-213918 20110929
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L27/06 ; H01L21/822
Abstract:
A semiconductor device includes a logic circuit and an active element circuit. The logic circuit is provided with semiconductor elements formed in a semiconductor substrate. The active element circuit is provided with transistors formed using semiconductor layers formed over a diffusion insulating film formed above a semiconductor substrate. The active element circuit is controlled by the logic circuit.
Public/Granted literature
- US20130082765A1 SEMICONDUCTOR DEVICE AND SIP DEVICE USING THE SAME Public/Granted day:2013-04-04
Information query
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