Invention Grant
- Patent Title: Field-effect device and manufacturing method thereof
- Patent Title (中): 现场效应装置及其制造方法
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Application No.: US13740048Application Date: 2013-01-11
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Publication No.: US09035375B2Publication Date: 2015-05-19
- Inventor: Mayank Shrivastava , Harald Gossner , Ramgopal Rao , Maryam Shojaei Baghini
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/08 ; H01L29/10 ; H01L29/66 ; H01L29/739 ; H01L21/265 ; H01L29/06

Abstract:
Embodiments relate to a field-effect device that includes a body region, a first source/drain region of a first conductivity type, a second source/drain region, and a pocket implant region adjacent to the first source/drain region, the pocket implant region being of a second conductivity type, wherein the second conductivity type is different from the first conductivity type. The body region physically contacts the pocket implant region.
Public/Granted literature
- US20130140626A1 Field-Effect Device and Manufacturing Method Thereof Public/Granted day:2013-06-06
Information query
IPC分类: