Invention Grant
- Patent Title: Nanowire capacitor for bidirectional operation
- Patent Title (中): 用于双向操作的纳米线电容器
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Application No.: US13967807Application Date: 2013-08-15
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Publication No.: US09035383B2Publication Date: 2015-05-19
- Inventor: Sarunya Bangsaruntip , Amlan Majumdar , Jeffrey W. Sleight
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Michael J. Chang, LLC
- Agent Louis J. Percello
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L49/02 ; H01L21/84 ; H01L27/12 ; H01L21/77 ; B82Y40/00 ; H01L27/06
Abstract:
A method of fabricating an electronic device includes the following steps. At least one first set and at least one second set of nanowires and pads are etched in an SOI layer of an SOI wafer. A first gate stack is formed that surrounds at least a portion of each of the first set of nanowires that serves as a channel region of a capacitor device. A second gate stack is formed that surrounds at least a portion of each of the second set of nanowires that serves as a channel region of a FET device. Source and drain regions of the FET device are selectively doped. A first silicide is formed on the source and drain regions of the capacitor device that extends at least to an edge of the first gate stack. A second silicide is formed on the source and drain regions of the FET device.
Public/Granted literature
- US20140209864A1 Nanowire Capacitor for Bidirectional Operation Public/Granted day:2014-07-31
Information query
IPC分类:
