A semiconductor device includes a fin-shaped silicon layer on a silicon substrate and a first insulating film around the fin-shaped silicon layer. A pillar-shaped silicon layer resides on the fin-shaped silicon layer. A gate electrode and gate insulating film surround the pillar-shaped silicon layer and a gate line is connected to the gate electrode and extends in a direction orthogonally intersecting the fin-shaped silicon layer. A first diffusion layer resides in an upper portion of the pillar-shaped silicon layer and a second diffusion layer resides in an upper portion of the fin-shaped silicon layer and a lower portion of the pillar-shaped silicon layer. A first silicide resides in an upper portion of the first diffusion layer and a second silicide resides in an upper portion of the second diffusion layer. A contact and metal wire are on the second silicide, and a metal wire is on the first contact.