Invention Grant
- Patent Title: Nitride shallow trench isolation (STI) structures
- Patent Title (中): 氮化物浅沟槽隔离（STI）结构
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Application No.: US13969760Application Date: 2013-08-19
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Publication No.: US09035418B2Publication Date: 2015-05-19
- Inventor: Daniel Piper , Franklin Chiang , Ganesh Yerubandi
- Applicant: Daniel Piper , Franklin Chiang , Ganesh Yerubandi
- Applicant Address: US WA Camas
- Assignee: WAFERTECH, LLC
- Current Assignee: WAFERTECH, LLC
- Current Assignee Address: US WA Camas
- Agency: Duane Morris LLP
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L29/06 ; H01L21/762
Abstract:
A shallow trench isolation (STI) structure includes a top surface formed completely of silicon nitride. The top surface of the STI structure is coplanar with a top substrate surface or extends above the top substrate surface. The STI structures include further dielectric materials beneath the silicon nitride and an oxide liner and any portions that extend above the substrate surface are formed of silicon nitride.
Public/Granted literature
- US20130334652A1 NITRIDE SHALLOW TRENCH ISOLATION (STI) STRUCTURES Public/Granted day:2013-12-19
Information query
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