Invention Grant
US09035447B2 Power semiconductor module and power semiconductor module assembly with multiple power semiconductor modules
有权
功率半导体模块和功率半导体模块组合，具有多个功率半导体模块
- Patent Title: Power semiconductor module and power semiconductor module assembly with multiple power semiconductor modules
- Patent Title (中): 功率半导体模块和功率半导体模块组合，具有多个功率半导体模块
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Application No.: US14257397Application Date: 2014-04-21
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Publication No.: US09035447B2Publication Date: 2015-05-19
- Inventor: Franc Dugal , Dominik Trüssel
- Applicant: ABB Technology AG
- Applicant Address: CH Zurich
- Assignee: ABB TECHNOLOGY AG
- Current Assignee: ABB TECHNOLOGY AG
- Current Assignee Address: CH Zurich
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: EP11186101 20111021
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/492 ; H01L23/051 ; H01L23/62 ; H01L23/00 ; H01L25/07 ; H01L23/58
Abstract:
A power semiconductor module and a power semiconductor module assembly, which includes a plurality of power semiconductor modules, are disclosed. The power semiconductor module includes an electrically conducting base plate, an electrically conducting top plate, arranged in parallel to the base plate and spaced apart from the base plate, at least one power semiconductor device, which is arranged on the base plate in a space formed between the base plate and the top plate, and at least one presspin, which is arranged in the space formed between the base plate and the top plate to provide contact between the semiconductor device and the top plate. A metallic protection plate can be provided at an inner face of the top plate facing towards the base plate, wherein the material of the protection plate has a melting temperature higher than the melting temperature of the top plate.
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Information query
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