Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US13690661Application Date: 2012-11-30
-
Publication No.: US09035453B2Publication Date: 2015-05-19
- Inventor: Katsuya Okumura , Yoshikazu Takahashi , Kazunori Takenouchi
- Applicant: Octec, Inc. , Fuji Electric Co., Ltd. , Kyocera Corporation
- Applicant Address: JP Tokyo JP Kawasaki JP Kyoto
- Assignee: OCTEC, INC.,FUJI ELECTRIC CO., LTD.,KYOCERA CORPORATION
- Current Assignee: OCTEC, INC.,FUJI ELECTRIC CO., LTD.,KYOCERA CORPORATION
- Current Assignee Address: JP Tokyo JP Kawasaki JP Kyoto
- Priority: JP2005-052389 20050228
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L23/498 ; H01L25/065 ; H01L23/00 ; H01L25/07 ; H05K1/11

Abstract:
A semiconductor device that improves the heat cycle resistance and power cycle resistance of a power module. An electrode member in which copper posts are formed in a plurality of perforations cut in a support made of a ceramic material is soldered onto a side of an IGBT where an emitter electrode is formed. By soldering the copper posts onto the electrode, heat generated in the IGBT is transferred to the electrode member and is radiated. In addition, even if a material of which the IGBT is made and copper differ in thermal expansivity, stress on a soldered interface is reduced and distortion is reduced. This suppresses the appearance of a crack. As a result, the heat cycle resistance and power cycle resistance of a power module can be improved.
Public/Granted literature
- US20130093082A1 SEMICONDUCTOR DEVICE, ELECTRODE MEMBER, AND ELECTRODE MEMBER FABRICATION METHOD Public/Granted day:2013-04-18
Information query
IPC分类: