Invention Grant
- Patent Title: Substrate with integrated passive devices and method of manufacturing the same
- Patent Title (中): 具有集成无源器件的基板及其制造方法
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Application No.: US13689727Application Date: 2012-11-29
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Publication No.: US09035457B2Publication Date: 2015-05-19
- Inventor: Chu-Fu Lin , Ming-Tse Lin , Yung-Chang Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L23/14 ; H01L23/498 ; H01L23/525 ; H01L23/522
Abstract:
A substrate with integrated passive devices and method of manufacturing the same are presented. The substrate may include through silicon vias, at least one redistribution layer having a 1st passive device pattern and stacked vias, and an under bump metal layer having a 2nd passive device pattern.
Public/Granted literature
- US20140145326A1 SUBSTRATE WITH INTEGRATED PASSIVE DEVICES AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-05-29
Information query
IPC分类:
