Invention Grant
US09035630B2 Output transistor leakage compensation for ultra low-power LDO regulator
有权
超低功耗LDO稳压器的输出晶体管漏电补偿
- Patent Title: Output transistor leakage compensation for ultra low-power LDO regulator
- Patent Title (中): 超低功耗LDO稳压器的输出晶体管漏电补偿
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Application No.: US13443920Application Date: 2012-04-11
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Publication No.: US09035630B2Publication Date: 2015-05-19
- Inventor: Rainer Krenzke
- Applicant: Rainer Krenzke
- Applicant Address: DE Kirchheim/Teck-Nabern
- Assignee: Dialog Semoconductor GmbH
- Current Assignee: Dialog Semoconductor GmbH
- Current Assignee Address: DE Kirchheim/Teck-Nabern
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Priority: EP12368010 20120406
- Main IPC: G05F1/00
- IPC: G05F1/00 ; G05F3/20 ; G05F1/56 ; G05F3/30

Abstract:
Circuits and methods to compensate leakage current of a LDO are disclosed. The compensation is achieved by a temperature dependent sink current generation, which has a nearly zero current consumption increase of about 50 nA at room temperature and starts sink current at temperatures about above 85 to 100 degrees Celsius, which is corresponding to a range of temperature wherein leakage currents come into account.
Public/Granted literature
- US20130265020A1 Output Transistor Leakage Compensation for Ultra Low-Power LDO Regulator Public/Granted day:2013-10-10
Information query
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