Invention Grant
US09035630B2 Output transistor leakage compensation for ultra low-power LDO regulator 有权
超低功耗LDO稳压器的输出晶体管漏电补偿

Output transistor leakage compensation for ultra low-power LDO regulator
Abstract:
Circuits and methods to compensate leakage current of a LDO are disclosed. The compensation is achieved by a temperature dependent sink current generation, which has a nearly zero current consumption increase of about 50 nA at room temperature and starts sink current at temperatures about above 85 to 100 degrees Celsius, which is corresponding to a range of temperature wherein leakage currents come into account.
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