Invention Grant
- Patent Title: Gate control circuit for MOS switch
- Patent Title (中): MOS开关门控电路
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Application No.: US14044772Application Date: 2013-10-02
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Publication No.: US09035691B2Publication Date: 2015-05-19
- Inventor: Wolfgang Roeper
- Applicant: Atmel Corporation
- Applicant Address: US CA San Jose
- Assignee: Atmel Corporation
- Current Assignee: Atmel Corporation
- Current Assignee Address: US CA San Jose
- Agency: Fish & Richardson P.C.
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H03K17/30 ; H03K17/16

Abstract:
A gate drive circuit is disclosed that charges the gate of a switching transistor to a voltage that is high enough to turn the switching transistor fully on and then prevent the charge from flowing back into the gate drive circuit. The gate drive circuit works with a ground rectifier switch by providing a fully differential connection of the switching transistor and its capacitor and resistor in parallel with the antenna.
Public/Granted literature
- US20150091634A1 GATE CONTROL CIRCUIT FOR MOS SWITCH Public/Granted day:2015-04-02
Information query
IPC分类: