Invention Grant
- Patent Title: Voltage-controlled magnetic memory element with canted magnetization
- Patent Title (中): 具有倾斜磁化的电压控制磁存储元件
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Application No.: US14101260Application Date: 2013-12-09
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Publication No.: US09036407B2Publication Date: 2015-05-19
- Inventor: Kang L. Wang , Pedram Khalili Amiri , Juan G. Alzate
- Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Applicant Address: US CA Oakland
- Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee Address: US CA Oakland
- Agent John P. O'Banion
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L43/10 ; G11C11/16 ; H01L43/08 ; H01L27/22
Abstract:
A memory cell including information that is stored in the state of a magnetic bit (i.e. in a free layer, FL), where the FL magnetization has two stable states that may be canted (form an angle) with respect to the horizontal and vertical directions of the device is presented. The FL magnetization may be switched between the two canted states by the application of a voltage (i.e. electric field), which modifies the perpendicular magnetic anisotropy of the free layer.
Public/Granted literature
- US20140169085A1 VOLTAGE-CONTROLLED MAGNETIC MEMORY ELEMENT WITH CANTED MAGNETIZATION Public/Granted day:2014-06-19
Information query
