Invention Grant
- Patent Title: Method and apparatus to interface semiconductor storage device and host to provide performance throttling of semiconductor storage device
- Patent Title (中): 接口半导体存储设备和主机以提供半导体存储设备的性能调节的方法和设备
-
Application No.: US13212404Application Date: 2011-08-18
-
Publication No.: US09037778B2Publication Date: 2015-05-19
- Inventor: Han Bin Yoon , Dong Gi Lee , Hyuck-Sun Kwon
- Applicant: Han Bin Yoon , Dong Gi Lee , Hyuck-Sun Kwon
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG Electronics Co., Ltd.
- Current Assignee: SAMSUNG Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Ellsworth IP Group PLLC
- Priority: KR10-2010-0080697 20100820; KR10-2010-0080698 20100820; KR10-2010-0080699 20100820; KR10-2010-0080862 20100820
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F3/06
Abstract:
A method and apparatus to interface a semiconductor storage device and a host in order to provide performance throttling of the semiconductor storage device. In the method, the semiconductor storage can receive a setting request command from the host. The semiconductor storage device sets a performance throttling parameter to a particular value in response to the setting request command. The semiconductor storage device can send to the host a setting response signal indicating completion of the setting of the performance throttling parameter.
Public/Granted literature
Information query
