Invention Grant
- Patent Title: Method for detaching a semiconductor chip from a foil
- Patent Title (中): 从箔上分离半导体芯片的方法
-
Application No.: US13839586Application Date: 2013-03-15
-
Publication No.: US09039867B2Publication Date: 2015-05-26
- Inventor: Ernst Barmettler , Fabian Hurschler , Brian Pulis
- Applicant: Besi Switzerland AG
- Applicant Address: CH Cham
- Assignee: Besi Switzerland AG
- Current Assignee: Besi Switzerland AG
- Current Assignee Address: CH Cham
- Agency: Nixon Peabody LLP
- Priority: CH453/12 20120330
- Main IPC: B32B38/10
- IPC: B32B38/10 ; H01L21/67 ; H01L21/677 ; H01L21/02 ; H01L21/00
Abstract:
A method for detaching a semiconductor chip from a foil uses a die ejector comprising plates having a straight supporting edge and an L-shaped supporting edge comprises: lifting of the plates to a height H1 above the surface of a cover plate; lowering of a first pair of plates with L-shaped supporting edge; optionally, lowering of a second pair of plates with L-shaped supporting edge; lifting of the plates that have not yet been lowered to a height H2>H1; staggered lowering of plates that have not yet been lowered, with at least one or several plates not being lowered; optionally, lowering of the plates that have not yet been lowered to a height H3
Public/Granted literature
- US20130255889A1 Method For Detaching A Semiconductor Chip From A Foil Public/Granted day:2013-10-03
Information query
