Invention Grant
- Patent Title: Freestanding films with electric field-enhanced piezoelectric coefficients
- Patent Title (中): 具有电场增强压电系数的独立膜
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Application No.: US12784173Application Date: 2010-05-20
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Publication No.: US09039921B2Publication Date: 2015-05-26
- Inventor: Wei-Heng Shih , Hongyu Luo , Christian Martorano , Wan Y. Shih
- Applicant: Wei-Heng Shih , Hongyu Luo , Christian Martorano , Wan Y. Shih
- Applicant Address: US PA Philadelphia
- Assignee: Drexel University
- Current Assignee: Drexel University
- Current Assignee Address: US PA Philadelphia
- Agency: Mendelsohn, Drucker & Dunleavy, P.C.
- Main IPC: C04B35/495
- IPC: C04B35/495 ; H01L41/18 ; H01L41/187 ; C04B35/00 ; C04B35/499 ; C04B35/626 ; C04B35/628 ; C04B35/634 ; H01L41/43

Abstract:
A method to produce low-temperature sinterable powders which are then subsequently used to fabricate freestanding piezoelectric films with very large electric-field-enhanced piezoelectric response is provided. The −d31 coefficient for PMN-PT layers can be as high as 2000 pm/V, larger than that of commercial single crystalline PMN-PT bulk materials, at 10 kV/cm (or 20 V over the 20-micron film thickness). In contrast to single crystals, the polycrystalline freestanding films are easy to fabricate and can be made into any size. The films are also easily miniaturized. The method can be applied to nearly any piezoelectric material.
Public/Granted literature
- US20100224818A1 FREESTANDING FILMS WITH ELECTRIC FIELD-ENHANCED PIEZOELECTRIC COEFFICIENTS Public/Granted day:2010-09-09
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