Invention Grant
- Patent Title: Methods for achieving width control in etching processes
- Patent Title (中): 在蚀刻工艺中实现宽度控制的方法
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Application No.: US13428925Application Date: 2012-03-23
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Publication No.: US09040317B2Publication Date: 2015-05-26
- Inventor: Keng-Ying Liao , Szu-Hung Yang , Chiung Wen Hsu
- Applicant: Keng-Ying Liao , Szu-Hung Yang , Chiung Wen Hsu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/28 ; H01L21/311 ; H01L21/3213 ; H01L21/8238
Abstract:
A method includes performing a patterning step on a layer using a process gas. When the patterning step is performed, a signal strength is monitored, wherein the signal strength is from an emission spectrum of a compound generated from the patterning step. The compound includes an element in the patterned layer. At a time the signal strength is reduced to a pre-determined threshold value, the patterning step is stopped.
Public/Granted literature
- US20130252355A1 Methods for Achieving Width Control in Etching Processes Public/Granted day:2013-09-26
Information query
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