Invention Grant
US09040326B2 High light extraction efficiency nitride based light emitting diode by surface roughening
有权
高光提取效率氮化物基发光二极管通过表面粗糙化
- Patent Title: High light extraction efficiency nitride based light emitting diode by surface roughening
- Patent Title (中): 高光提取效率氮化物基发光二极管通过表面粗糙化
-
Application No.: US14456768Application Date: 2014-08-11
-
Publication No.: US09040326B2Publication Date: 2015-05-26
- Inventor: Hong Zhong , Anurag Tyagi , Kenneth J. Vampola , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- Applicant: The Regents of the University of California
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L33/02
- IPC: H01L33/02 ; H01L33/22 ; H01L33/32 ; H01L21/02 ; H01L33/00 ; H01L33/10 ; H01L33/20 ; H01L33/18
Abstract:
A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.
Public/Granted literature
- US20140346542A1 HIGH LIGHT EXTRACTION EFFICIENCY NITRIDE BASED LIGHT EMITTING DIODE BY SURFACE ROUGHENING Public/Granted day:2014-11-27
Information query
IPC分类:
