Invention Grant
- Patent Title: Manufacturing method for an LED
- Patent Title (中): LED的制造方法
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Application No.: US14269189Application Date: 2014-05-04
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Publication No.: US09040328B2Publication Date: 2015-05-26
- Inventor: Ya-Wen Lin , Shih-Cheng Huang , Po-Min Tu , Chia-Hung Huang , Shun-Kuei Yang
- Applicant: Zhongshan Innocloud Intellectual Property Services Co., Ltd.
- Applicant Address: CN Zhongshan
- Assignee: Zhongshan Innocloud Intellectual Property Services Co., Ltd.
- Current Assignee: Zhongshan Innocloud Intellectual Property Services Co., Ltd.
- Current Assignee Address: CN Zhongshan
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN201110181775 20110630
- Main IPC: H01L21/04
- IPC: H01L21/04 ; H01L33/20 ; H01L33/00 ; H01L33/14 ; H01L33/38

Abstract:
A manufacturing method for an LED includes providing a substrate having a buffer layer and a first N-type epitaxial layer, forming a blocking layer on the first N-type epitaxial layer, and etching the blocking layer to form patterned grooves penetrating the blocking layer to the first N-type epitaxial layer. A second N-type epitaxial layer is then formed on the blocking layer to contact the first N-type epitaxial layer; a light emitting layer, a P-type epitaxial layer and a conductive layer are thereafter disposed on the second N-type epitaxial layer; an N-type electrode is formed to electrically connect with the first N-type epitaxial layer, and a P-type electrode is formed on the conductive layer. The N-type electrode is disposed on the blocking layer and separated from the second N-type epitaxial layer and has a portion extending into the patterned grooves to contact the first N-type epitaxial layer.
Public/Granted literature
- US20140242738A1 MANUFACTURING METHOD FOR AN LED Public/Granted day:2014-08-28
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