Invention Grant
- Patent Title: Temperature grading for band gap engineering of photovoltaic devices
- Patent Title (中): 光伏器件带隙工程的温度分级
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Application No.: US13295511Application Date: 2011-11-14
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Publication No.: US09040340B2Publication Date: 2015-05-26
- Inventor: Ahmed Abou-Kandil , Keith E. Fogel , Augustin J. Hong , Jeehwan Kim , Mohamed Saad , Devendra K. Sadana
- Applicant: Ahmed Abou-Kandil , Keith E. Fogel , Augustin J. Hong , Jeehwan Kim , Mohamed Saad , Devendra K. Sadana
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L31/042
- IPC: H01L31/042 ; H01L31/075 ; H01L27/146 ; H01L31/20
Abstract:
A method for fabricating a photovoltaic device includes depositing a p-type layer at a first temperature and depositing an intrinsic layer while gradually increasing a deposition temperature to a final temperature. The intrinsic layer deposition is completed at the final temperature. An n-type layer is formed on the intrinsic layer.
Public/Granted literature
- US20130118565A1 TEMPERATURE GRADING FOR BAND GAP ENGINEERING OF PHOTOVOLTAIC DEVICES Public/Granted day:2013-05-16
Information query
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