Invention Grant
- Patent Title: Photovoltaic cell and manufacturing method thereof
- Patent Title (中): 光伏电池及其制造方法
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Application No.: US13606406Application Date: 2012-09-07
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Publication No.: US09040342B2Publication Date: 2015-05-26
- Inventor: Shiuan-Leh Lin
- Applicant: Shiuan-Leh Lin
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L31/06
- IPC: H01L31/06 ; H01L31/18 ; H01L31/0693

Abstract:
A photovoltaic cell comprises a top subcell having a first band gap; a middle subcell comprising a substrate and having a second band gap, wherein the substrate comprises a first side and a second side opposite to the first side; and a bottom subcell having a third band gap, wherein the top subcell is grown on the first side of the substrate and the bottom subcell is grown on the second side of the substrate, wherein the first band gap is larger than the second band gap and the second band gap is larger than the third band gap.
Public/Granted literature
- US20140069489A1 PHOTOVOLTAIC CELL AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-03-13
Information query
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