Invention Grant
- Patent Title: Chip comprising a fill structure
- Patent Title (中): 芯片包括填充结构
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Application No.: US14184856Application Date: 2014-02-20
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Publication No.: US09040354B2Publication Date: 2015-05-26
- Inventor: Gunther Mackh , Gerhard Leschik , Adolf Koller , Harald Seidl
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L23/58 ; H01L21/82 ; G06F17/50
Abstract:
A chip includes a dielectric layer and a fill structure in the dielectric layer, wherein the fill structure extends along a dicing edge of the chip, with the fill structure abutting the dicing edge.
Public/Granted literature
- US20140170836A1 Chip Comprising a Fill Structure Public/Granted day:2014-06-19
Information query
IPC分类:
