Invention Grant
- Patent Title: Method of forming semiconductor structure
- Patent Title (中): 形成半导体结构的方法
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Application No.: US13242090Application Date: 2011-09-23
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Publication No.: US09040393B2Publication Date: 2015-05-26
- Inventor: Liang-Gi Yao , Chia-Cheng Chen , Ta-Ming Kuan , Jeff J. Xu , Clement Hsingjen Wann
- Applicant: Liang-Gi Yao , Chia-Cheng Chen , Ta-Ming Kuan , Jeff J. Xu , Clement Hsingjen Wann
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/265 ; H01L29/49 ; H01L29/51 ; H01L21/28 ; H01L29/66 ; H01L29/78
Abstract:
A method of forming a semiconductor device includes chemically cleaning a surface of a substrate to form a chemical oxide material on the surface. At least a portion of the chemical oxide material is removed at a removing rate of about 2 nanometer/minute (nm/min) or less. Thereafter, a gate dielectric layer is formed over the surface of the substrate.
Public/Granted literature
- US20120015503A1 METHOD OF FORMING SEMICONDUCTOR STRUCTURE Public/Granted day:2012-01-19
Information query
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