A pattern formation method comprises a process of forming a resist pattern with an opening that exposes a first region of a glass film arranged on a substrate through a base film; a process of forming a neutralization film above the glass film; a process of forming a directed self-assembly material layer containing a first segment and a second segment above the glass film; a process of microphase separating the directed self-assembly material layer to form a directed self-assembly pattern containing a first part that includes the first segment and a second part that includes the second segment; and a process of removing either the first part or the second part and using the other as a mask to process the base film.