Invention Grant
US09040929B2 Charge sensors using inverted lateral bipolar junction transistors
有权
使用反向横向双极结型晶体管的充电传感器
- Patent Title: Charge sensors using inverted lateral bipolar junction transistors
- Patent Title (中): 使用反向横向双极结型晶体管的充电传感器
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Application No.: US13561671Application Date: 2012-07-30
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Publication No.: US09040929B2Publication Date: 2015-05-26
- Inventor: Jin Cai , Tak H. Ning , Jeng-Bang Yau , Sufi Zafar
- Applicant: Jin Cai , Tak H. Ning , Jeng-Bang Yau , Sufi Zafar
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: G01T1/24
- IPC: G01T1/24 ; H01L31/115 ; H01L27/146
Abstract:
A sensor includes a collector, an emitter and a base-region barrier formed as an inverted bipolar junction transistor having a base substrate forming a base electrode to activate the inverted bipolar junction transistor. A level surface is formed by the collector, the emitter and the base-region barrier opposite the base substrate such that when the level surface is exposed to charge, the charge is measured during operation of the bipolar junction transistor.
Public/Granted literature
- US20140027871A1 CHARGE SENSORS USING INVERTED LATERAL BIPOLAR JUNCTION TRANSISTORS Public/Granted day:2014-01-30
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