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US09041036B2 Semiconductor light emitting device wherein a linear expansion coefficient of an intermediate layer is larger than a linear expansion coefficient of a first semiconductor layer and smaller than a linear expansion coefficient of a wavelength conversion layer 有权
半导体发光器件，其中中间层的线膨胀系数大于第一半导体层的线性膨胀系数且小于波长转换层的线性膨胀系数

Semiconductor light emitting device wherein a linear expansion coefficient of an intermediate layer is larger than a linear expansion coefficient of a first semiconductor layer and smaller than a linear expansion coefficient of a wavelength conversion layer
Abstract:
According to one embodiment, a semiconductor light emitting device includes first and second columnar units, a wavelength conversion layer, a light emitting unit, a resin unit and an intermediate layer. The first columnar unit extends in a first direction. The second columnar unit is provided apart from the first columnar unit, and extends in the first direction. The wavelength conversion layer is provided apart from the first and second columnar units in the first direction. The light emitting unit includes first and second semiconductor layers, and a light emitting layer configured to emit a first light. The resin unit covers side surfaces along the first direction of the first and second columnar units and the light emitting unit, and a surface of the light emitting unit. The intermediate layer includes first and second portions, and has a thickness thinner than a peak wavelength of the first light.
Abstract(Chinese):

根据一个实施例，半导体发光器件包括第一和第二柱状单元，波长转换层，发光单元，树脂单元和中间层。 第一柱状单元沿第一方向延伸。 第二柱状单元与第一柱状单元分开设置，并沿第一方向延伸。 波长转换层在第一方向上与第一和第二柱状单元分开设置。 发光单元包括第一和第二半导体层，以及被配置为发射第一光的发光层。 树脂单元沿着第一和第二柱状单元和发光单元的第一方向以及发光单元的表面覆盖侧表面。 中间层包括第一和第二部分，并且具有比第一光的峰值波长更薄的厚度。

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