Invention Grant
US09041052B2 Semiconductor device, semiconductor unit, and power semiconductor device
有权
半导体器件，半导体单元和功率半导体器件
- Patent Title: Semiconductor device, semiconductor unit, and power semiconductor device
- Patent Title (中): 半导体器件，半导体单元和功率半导体器件
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Application No.: US13052025Application Date: 2011-03-18
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Publication No.: US09041052B2Publication Date: 2015-05-26
- Inventor: Satoshi Teramae
- Applicant: Satoshi Teramae
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2010-117219 20100521
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L25/07 ; H01L23/373 ; H01L23/498 ; H01L23/00 ; H05K1/02 ; H01L23/04 ; H01L23/049 ; H01L23/24 ; H05K3/00 ; H05K3/22
Abstract:
A semiconductor device includes: an insulating substrate; a first electrode pattern and a second electrode pattern provided apart from each other on a major surface of the insulating substrate; a semiconductor element connected to the first electrode pattern; an electrode terminal connected to the second electrode pattern; and a connection wiring. The connection wiring electrically connects the first electrode pattern and the second electrode pattern with each other and has a thermal resistance larger than that of the first electrode pattern.
Public/Granted literature
- US20110284924A1 SEMICONDUCTOR DEVICE, SEMICONDUCTOR UNIT, AND POWER SEMICONDUCTOR DEVICE Public/Granted day:2011-11-24
Information query
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