A semiconductor device that includes the following is manufactured: an n− base layer; a p-type base layer formed on the surface of the n− base layer; an n+ source layer formed in the inner area of the p-type base layer; a gate electrode formed so as to face a channel region across a gate insulating film; a plurality of p-type columnar regions that are formed in the n− base layer so as to continue from the p-type base layer and that are arranged at a first pitch; and a plurality of p+ collector layers that are selectively formed on the rear surface of the n− base layer and that are arranged at a second pitch larger than the first pitch.